Recently, double pinch-off points have been discovered in some memristive devices where the I-V hysteresis curve intersects in two points generating triple lobes. This paper investigates a fractional-order flux-controlled mathematical model which is able to develop the multiple pinch-off points or multiple lobes. The conditions for observing double pinch-off points (triple lobes) are derived in addition to the locations of the pinch-off points which do not appear in the integer domain. Also, expressions for maximum and minimum conductance are derived. Finally, a floating fractional flux-controlled memristor emulator circuit to generate the triple lobes is introduced and discussed. The PSICE results and the mathematical model results are matched. © 2018 IEEE.
Hamed E.M., Fouda M.E., Radwan A.G.
Networks (circuits); Flux-controlled; Fractional order; Hysteresis curve; Memristor; Pinchoff; Two-point; Memristors
Proceedings – IEEE International Symposium on Circuits and Systems, Vol. 2018-May, Art. No. 8351761, Doi: 10.1109/ISCAS.2018.8351761