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Posts in category: Ghoneima M.

Design and analysis of 2T2M hybrid CMOS-Memristor based RRAM

2018 El-Naggar A.M.Elbtity M.E.Emara A.Ghoneima M.Journal Radwan A.G.Shaarawy N.

In this paper, a Static Noise Margin (SNM) analysis for 2T2M RRAM cell is investigated

2T2M memristor-based memory cell for higher stability RRAM modules

2015 Confrence Paper Ghoneima M.Radwan A.G.Shaarawy N.

This paper introduces a novel 2T2M memristor based memory cell which, offers higher stability and noise margins than previous works